InAs/GaSb infrared photovoltaic detector at 77 K
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941138?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices
2. Proposal for strained type II superlattice infrared detectors
3. Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices
4. The effect of interface bond type on the structural and optical properties of GaSb/InAs superlattices
5. Infrared optical characterization of InAs/Ga1−xInxSb superlattices
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1. Influence of V/III flux ratio on type-II InAs/GaSb superlattice for very-long wavelength;Micro and Nanostructures;2023-06
2. Effects of different passivation and etching methods on the dark current of InAs/GaSb long-wave detectors;Eighth Symposium on Novel Photoelectronic Detection Technology and Applications;2022-03-27
3. Ultra-thin enhanced-absorption long-wave infrared detectors;Applied Physics Letters;2018-02-26
4. Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains;International Conference on Space Optics — ICSO 2014;2017-11-17
5. Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping;Semiconductor Science and Technology;2015-06-30
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