Electrical properties of bulk semi-insulating β-Ga2O3(Fe)-Reference-Cited by-同舟云学术

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Electrical properties of bulk semi-insulating β-Ga2O3(Fe)

Published:2018-10 Issue:14 Volume:113 Page:142102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Polyakov A. Y.¹,Smirnov N. B.¹,Shchemerov I. V.¹,Pearton S. J.²^ORCID,Ren Fan³^ORCID,Chernykh A. V.¹⁴^ORCID,Kochkova A. I.¹

Affiliation:

1. National University of Science and Technology MISiS, 4 Leninskiy Ave., Moscow 119049, Russia

2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

4. Pulsar Scientific and Production Enterprise, Joint Stock Company, Okruzhnoy Way, House 27, Moscow 105187, Russia

Funder

Defense Threat Reduction Agency

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5051986

Reference29 articles.

1. Perspective—Opportunities and Future Directions for Ga2O3

2. Guest Editorial: The dawn of gallium oxide microelectronics

3. A review of Ga2O3materials, processing, and devices

4. MBE grown Ga2O3 and its power device applications

5. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

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