Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons-Reference-Cited by-同舟云学术

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Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Published:2009-11-30 Issue:22 Volume:95 Page:223504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Leach J. H.,Zhu C. Y.,Wu M.,Ni X.,Li X.,Xie J.,Özgür Ü.,Morkoç H.,Liberis J.,Šermukšnis E.,Matulionis A.,Cheng H.,Kurdak Ç.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3271183

Reference23 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

3. Status of the Emerging InAlN/GaN Power HEMT Technology

4. Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

5. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

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3. Non-equilibrium longitudinal optical phonons and their lifetimes;Applied Physics Reviews;2021-06

4. Reliability Issues in GaN Electronic Devices;Nitride Semiconductor Technology;2020-08-03

5. Out-diffusion of Pd as a potential degradation mechanism in GaN HEMTs with Ni-Pd-Au Schottky contacts;Gallium Nitride Materials and Devices XV;2020-02-27

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