Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412282
Reference9 articles.
1. Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors
2. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
3. Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
4. Current limitation after pinch-off in AlGaN/GaN FETs
5. Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors
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