Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990697?crawler=true&mimetype=application/pdf
Reference6 articles.
1. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
2. Device characteristics of scaled GaN/AlGaN MODFETs
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