High rate etching of 4H–SiC using a SF6/O2 helicon plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126329
Reference11 articles.
1. Reactive ion etching of monocrystalline, polycrystalline, and amorphous silicon carbide in CF4/O2mixtures
2. Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System
3. High etch rates of SiC in magnetron enhanced SF6 plasmas
4. Low damage and residue‐free dry etching of 6H–SiC using electron cyclotron resonance plasma
5. Comparison of dry etch chemistries for SiC
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