Density profile transition and high-energy electron transport in a magnetically expanding radio frequency plasma
Author:
Affiliation:
1. Division of Systems Research, Yokohama National University 1 , Yokohama 240-8501, Japan
2. Japan Society for the Promotion of Science 2 , Tokyo 102-0083, Japan
3. Department of Electrical Engineering, Tohoku University 3 , Sendai 980-8579, Japan
Abstract
Funder
Japan Society for the Promotion of Science
Fusion Oriented REsearch for disruptive Science and Technology
Publisher
AIP Publishing
Subject
Condensed Matter Physics
Link
https://pubs.aip.org/aip/pop/article-pdf/doi/10.1063/5.0126901/16665463/013509_1_online.pdf
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1. High rate etching of 4H–SiC using a SF6/O2 helicon plasma
2. Vertical silicon etching by using an automatically and fast-controlled frequency tunable rf plasma source
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5. Three-Dimensional Mapping of Ion Density in a Double-Layer Helicon Plasma
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