Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film-Reference-Cited by-同舟云学术

Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film

Published:1998-12-15 Issue:12 Volume:84 Page:6747-6752
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mikhaelashvili V.,Betzer Y.,Prudnikov I.,Orenstein M.,Ritter D.,Eisenstein G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369002

Reference8 articles.

1. Structural and electrical characteristics of metal‐insulator‐semiconductor diodes based on Y2O3dielectric thin films on silicon

2. Study of rf‐sputtered yttrium oxide films on silicon by capacitance measurements

3. Synthesis of yttrium oxide thin films with and without the use of organic self-assembled monolayers

4. Leakage currents in amorphous Ta2O5 thin films

5. Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

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