Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy-Reference-Cited by-同舟云学术

Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

Published:1997-07-28 Issue:4 Volume:71 Page:500-502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lau W. S.,Zhong L.,Lee Allen,See C. H.,Han Taejoon,Sandler N. P.,Chong T. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119590

Reference10 articles.

1. Process and device technologies for 1 Gbit dynamic random-access memory cells

2. Contribution à l'étude des pièges dans Ta2O5 thermique

3. Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications

4. A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing inO2orN2Oby Zero-Bias Thermally Stimulated Current Spectroscopy

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