Leakage currents in amorphous Ta2O5 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365252
Reference22 articles.
1. Leakage-current reduction in thin Ta/sub 2/O/sub 5/ films for high-density VLSI memories
2. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
3. Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5films on silicon
4. Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices
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