Structural and electrical characteristics of metal‐insulator‐semiconductor diodes based on Y2O3dielectric thin films on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350605
Reference29 articles.
1. Ultra-thin Ta2O5dielectric film for high-speed bipolar memories
2. Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memory
3. Electrical characteristics of metal‐insulator‐semiconductor diodes with ZrO2/SiO2dielectric films
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