Factors determining the composition of strained GeSi layers grown with disilane and germane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112644
Reference23 articles.
1. Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4
2. Hydrogen coverage during Si growth from SiH4and Si2H6
3. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
4. Insituobservation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGexalloys on Si(100) surfaces
5. Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition;Japanese Journal of Applied Physics;2006-01-10
2. Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using trisilane;Journal of Physics D: Applied Physics;2005-03-04
3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2005-01
4. Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric;Applied Physics Letters;2004-11
5. Growth of strained Si and strained Ge heterostructures on relaxed Si[sub 1−x]Ge[sub x] by ultrahigh vacuum chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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