Growth of strained Si and strained Ge heterostructures on relaxed Si[sub 1−x]Ge[sub x] by ultrahigh vacuum chemical vapor deposition-Reference-Cited by-同舟云学术

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Growth of strained Si and strained Ge heterostructures on relaxed Si[sub 1−x]Ge[sub x] by ultrahigh vacuum chemical vapor deposition

Published:2004 Issue:1 Volume:22 Page:158
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lee Minjoo L.,Pitera Arthur J.,Fitzgerald E. A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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