1. International Technology Roadmap for Semiconductors 2014, 2013. 〈www.itrs.net〉.
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. G. Eneman, D.P. Brunco, L. Witters, B. Vincent, P. Favia, A. Hikavyy, A. de Keersgieter, J. Mitard, R. Loo, A. Veloso, O. Richard, H. Bender, S.H. Lee, M. van Dal, N. Kabir, W. Vandervorst, M. Caymax, N. Horiguchi, N. Collaert, A. Thean, in: IEEE International Electron Devices Meeting (IEDM), 2012, pp. 6.5.1–6.5.4.
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates