A dislocation-driven laminated relaxation process in Si1−xGex grown on Si (001) by molecular beam epitaxy-Reference-Cited by-同舟云学术

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A dislocation-driven laminated relaxation process in Si1−xGex grown on Si (001) by molecular beam epitaxy

Published:2021-12 Issue: Volume:16 Page:100140
ISSN:2588-8420
Container-title:Materials Today Nano
language:en
Short-container-title:Materials Today Nano

Author:

Xia S.,Zhang W.,Yuan Z.^ORCID,Li J.,Ye J.,Gu Y.,Miao Y.,Li C.,Deng Y.,Shen A.,Lu H.^ORCID,Chen Y.-F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. High performance thermoelectric materials: progress and their applications;Yang;Adv. Energy Mater.,2017

2. Mid-infrared (Mid-IR) silicon-based photonics;Fedeli;Proc. IEEE,2018

3. Silicon-germanium receivers for short-wave-infrared optoelectronics and communications;Benedikovic;Nanophotonics,2021

4. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys;Fischetti;J. Appl. Phys.,1996

5. Theoretical study of photonic band gap in the SiGe;Beghoul;AIP Conf. Proc.,2011

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lattice-matched growth of high-Sn-content (x∼0.1) Si_1−xSn_x layers on Si_1−yGe_y buffers using molecular beam epitaxy;Applied Physics Express;2023-04-01

2. Experimental Evidence of Superdiffusive Thermal Transport in Si_0.4Ge_0.6 Thin Films;Nano Letters;2022-09-02

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