Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104709
Reference14 articles.
1. Reactive sticking coefficients for silane and disilane on polycrystalline silicon
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3. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
4. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
5. Decomposition mechanisms of SiHx species on Si(100)‐(2×1) for x=2, 3, and 4
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