Epitaxial growth of β-Ga2O3 on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Epitaxial growth of β-Ga₂O₃ on SrTiO₃ (001) and SrTiO₃-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

Published:2022-04-14 Issue:14 Volume:131 Page:145702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hadamek Tobias¹,Posadas Agham B.¹,Al-Quaiti Fatima²,Smith David J.³,McCartney Martha R.³,Dombrowski Eric⁴,Demkov Alexander A.¹^ORCID

Affiliation:

1. Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

2. Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, USA

3. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

4. Staib Instruments, Inc., 101 Stafford Court, Williamsburg, Virginia 23185, USA

Abstract

Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and [Formula: see text]-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO ⟨110⟩ and β-Ga2O3 [021] || STO ⟨100⟩, respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0082859

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