Epitaxial growth of β-Ga2O3 on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Epitaxial growth of β-Ga₂O₃ on SrTiO₃ (001) and SrTiO₃-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

Published:2022-04-14 Issue:14 Volume:131 Page:145702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hadamek Tobias¹,Posadas Agham B.¹,Al-Quaiti Fatima²,Smith David J.³,McCartney Martha R.³,Dombrowski Eric⁴,Demkov Alexander A.¹^ORCID

Affiliation:

1. Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

2. Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, USA

3. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

4. Staib Instruments, Inc., 101 Stafford Court, Williamsburg, Virginia 23185, USA

Abstract

Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and [Formula: see text]-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO ⟨110⟩ and β-Ga2O3 [021] || STO ⟨100⟩, respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0082859

Reference34 articles.

1. A review of Ga2O3materials, processing, and devices

2. Recent progress in Ga2O3power devices

3. Development of gallium oxide power devices

4. Lateral and vertical power transistors in GaN and Ga 2 O 3

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition;Micro and Nanostructures;2024-09

2. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

3. Tailoring electrical properties of PVC/PEC/Co3O4 nanocomposites by electron beam irradiation for advanced medium voltage cable applications;Radiation Physics and Chemistry;2024-08

4. Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3;APL Materials;2024-01-01

5. Evolution of β-Ga2O3 to γ -Ga2O3 solid-solution epitaxial films after high-temperature annealing;Journal of Vacuum Science & Technology A;2023-10-02