Lateral and vertical power transistors in GaN and Ga 2 O 3-Reference-Cited by-同舟云学术

Lateral and vertical power transistors in GaN and Ga 2 O 3

Published:2019-12 Issue:15 Volume:12 Page:3919-3927
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Hilt Oliver¹,Bahat Treidel Eldad¹,Wolf Mihaela¹,Kuring Carsten²,Tetzner Kornelius¹,Yazdani Hossein¹,Wentzel Andreas¹,Würfl Joachim¹

Affiliation:

1. Ferdinand‐Braun‐InstitutLeibniz‐Institut für HöchstfrequenztechnikGustav‐Kirchhoff‐Str. 412489BerlinGermany

2. Chair of Power ElectronicsTechnische Universität, BerlinEinsteinufer 1910587BerlinGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2019.0059

Reference47 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. GaN-on-Si Power Technology: Devices and Applications

3. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

4. 2018 Proc.ISPSD'18 Chicago IL USA D. Ji W. Li S. Chowdhury Switching performance analysis of GaN OG‐FET using TCADdevice‐circuit‐integrated model 208 211

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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