Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91290
Reference14 articles.
1. LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
2. Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)
3. Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition
4. Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition
5. Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAsp‐nheterostructure lasers grown by metalorganic chemical vapor deposition
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