Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90026
Reference10 articles.
1. LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
2. Confined‐carrier luminescence of a thin In1−xGaxP1−zAszwell (x∼0.13,z∼0.29, ∼400 Å) in an InPp‐njunction
3. Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)
4. Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
5. Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition
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