Confined‐carrier luminescence of a thin In1−xGaxP1−zAszwell (x∼0.13,z∼0.29, ∼400 Å) in an InPp‐njunction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89767
Reference7 articles.
1. LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
2. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
3. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
4. Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures
5. Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
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