LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89665
Reference10 articles.
1. Superfine structures of semiconductors grown by molecular‐beam epitaxy
2. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
3. Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer
4. Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
5. Limitations of the direct‐indirect transition on In1−xGaxP1−zAszheterojunctions
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