Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer-Reference-Cited by-同舟云学术

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Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer

Published:1974-12 Issue: Volume:27 Page:70-85
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thompson G.H.B.,Kirkby P.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. DOUBLE‐HETEROSTRUCTURE INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2

2. (GaAl)As lasers with a heterostructure for optical confinement and additional heterojunctions for extreme carrier confinement

3. Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement

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1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

2. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

3. Liquid phase epitaxy;Applied Physics A Solids and Surfaces;1991-06

4. Calculation of composition variation of In1−vGavAs ternary crystals for diffusion and electromigration limited growth from a temperature graded solution with source material;Journal of Crystal Growth;1991-04

5. Basic Techniques for Fabricating Semiconductor Lasers;Physics of Semiconductor Lasers;1991

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