Calculation of composition variation of In1−vGavAs ternary crystals for diffusion and electromigration limited growth from a temperature graded solution with source material-Reference-Cited by-同舟云学术

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Calculation of composition variation of In1−vGavAs ternary crystals for diffusion and electromigration limited growth from a temperature graded solution with source material

Published:1991-04 Issue:4 Volume:110 Page:781-794
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakajima Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Proc. 15th Intern. Symp. on GaAs and Related Compounds;Bonner,1989

2. Proc. 5th Intern. Symp. on GaAs and Related Compounds;Daniele,1975

3. cw GaAs/GaAlAs DH lasers grown by Peltier‐induced LPE

4. Peltier‐induced LPE and composition stabilization of GaAlAs

5. Peltier‐induced liquid phase epitaxy and compositional control of mm‐thick layers of (Al,Ga)As

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1. Liquid Phase Epitaxy;Reference Module in Materials Science and Materials Engineering;2016

2. Liquid phase electroepitaxy of semiconductors under static magnetic field;CrystEngComm;2011

3. Liquid-Phase Electroepitaxy of Semiconductors;Springer Handbook of Crystal Growth;2010

4. Phase Diagrams and Modeling in Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

5. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007

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