Peltier‐induced liquid phase epitaxy and compositional control of mm‐thick layers of (Al,Ga)As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329247
Reference7 articles.
1. Efficient Electroluminescence from Zinc‐Diffused Ga1−xAlxAs Diodes at 25°C
2. Growth of thick GaxAl1-xAs layers by liquid-phase epitaxy
3. Variation of Liquid and Solid Compositions during LPE Growth from a Ternary Component Solution
4. Peltier‐induced LPE and composition stabilization of GaAlAs
5. cw GaAs/GaAlAs DH lasers grown by Peltier‐induced LPE
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4. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007
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