Limitations of the direct‐indirect transition on In1−xGaxP1−zAszheterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323700
Reference21 articles.
1. Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)
2. Heterojunction laser operation of N‐free and N‐doped GaAs1−yPy(y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct‐indirect transition (y∼yc?0.46)
3. Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K)
4. Yellow In1−xGaxP1−zAszdouble‐heterojunction lasers
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