Yellow In1−xGaxP1−zAszdouble‐heterojunction lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.322928
Reference20 articles.
1. Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution
2. Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)
3. Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)
4. Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP
5. Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)
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1. Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
2. Growth and characterization of high‐quality In0.32Ga0.68P layers on GaAs0.61P0.39substrates by liquid‐phase epitaxy;Journal of Applied Physics;1991-07-15
3. A calculation of the compositional conditions to obtain lattice match of III–V semiconductor alloys with InP and GaP substrates;Il Nuovo Cimento D;1988-07
4. Optimization of II–VI based heterojunctions;Solid-State Electronics;1987-11
5. Liquid Phase Epitaxial Growth of lnGaAsP on GaAs1-yPySubstrates (y=0.31 and 0.39);Japanese Journal of Applied Physics;1987-05-20
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