Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ

Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)

Published:1974-12-15 Issue:12 Volume:25 Page:725-727
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Coleman J. J.,Hitchens W. R.,Holonyak N.,Ludowise M. J.,Groves W. O.,Keune D. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1655377

Reference13 articles.

1. AlxGa1−xAs1−y′Py′–GaAs1−yPyHETEROSTRUCTURE LASER AND LAMP JUNCTIONS

2. Double Heterojunction AlGaAsP Quaternary Lasers

3. Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)

4. Luminescence, laser, and carrier‐lifetime behavior of constant‐temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAs

5. Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)

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