Photoluminescence of nitrogen (N)‐implanted and N‐free In0.30Ga0.70P grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328184
Reference13 articles.
1. Photoluminescence Processes inIn1−xGaxPat 2°K
2. In1−x Gax P:N Laser Operation (cw, 77°K) on the Nitrogen A‐Line Transition in Indirect Crystals (x ≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x ≥ 0.71)
3. Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor‐Grownp‐nJunctions
4. Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)
5. Yellow In1−xGaxP1−zAszdouble‐heterojunction lasers
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1. Effect of post-implantation annealing on Al–N isoelectronic trap formation in silicon: Al–N pair formation and defect recovery mechanisms;AIP Advances;2018-05
2. Photoluminescence from single nitrogen isoelectronic centers in gallium phosphide produced by ion implantation;Journal of Applied Physics;2013-07-21
3. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06
4. Luminescence of N-Implanted In0.32Ga0.68P Grown by Liquid-Phase Epitaxy;Japanese Journal of Applied Physics;1992-09-15
5. Photoluminescence study of rapid thermal annealing from nitrogen‐implanted In0.32Ga0.68P;Journal of Applied Physics;1992-09
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