Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655505
Reference16 articles.
1. In1−xGaxP p‐n Junction Lasers
2. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
3. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
4. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS
5. SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND cw LASER OPERATION (77 °K) OF In1−xGaxP
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1. Liquid-Phase Epitaxial Growth ofIn0.35Ga0.65Pon GaP Substrates from Sn-Rich Solutions;Japanese Journal of Applied Physics;1997-09-15
2. Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates;Applied Physics Letters;1995-02-13
3. Growth of GaInP thick layers by the modified yo-yo solute feeding method;Journal of Crystal Growth;1993-03
4. Epitaxial growth of AlGaInP lattice-matched to GaAsP substrates by organometallic vapor phase epitaxy;Journal of Crystal Growth;1993-02
5. Magnesium doping in In0.32Ga0.68P grown by liquid‐phase epitaxy;Journal of Applied Physics;1992-05
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