Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. STIMULATED EMISSION IN In1 ‐xGaxP
2. SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND cw LASER OPERATION (77 °K) OF In1−xGaxP
3. In1−xGaxP p‐n Junction Lasers
4. Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor‐Grownp‐nJunctions
5. Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)
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1. Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers;Journal of Crystal Growth;2009-05
2. Influence of the GaAs substrate orientation on the composition of GaxIn1−xP (x≈0.5) grown by LPE and MOCVD;Thin Solid Films;2008-09
3. Investigation of the “composition-pulling or lattice-latching” effect in LPE;Journal of Crystal Growth;2005-04
4. A theoretical approach to the In1-xGaxP LPE growth by computer simulation technique;Physica Status Solidi (a);1996-07-16
5. Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy;Il Nuovo Cimento D;1995-02
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