Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. III–V compound multi-junction solar cells: present and future
2. AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding
3. 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
4. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
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1. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy;Journal of Applied Physics;2015-12-09
2. Study on growth and characterizations of GaxIn1−xP/GaAs solar cell structure;Journal of Materials Science: Materials in Electronics;2013-04-26
3. Effects of Substrate Orientation on the Photovoltaic Performance of InGaAs Solar Cells;IEEE Transactions on Electron Devices;2010-09
4. Microstructures produced during the epitaxial growth of InGaN alloys;Journal of Crystal Growth;2010-03
5. Effects of Substrate Orientation on Photovoltaic Performance of InGaAs Solar Cells;ECS Transactions;2010-02-22
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