Influence of the GaAs substrate orientation on the composition of GaxIn1−xP (x≈0.5) grown by LPE and MOCVD-Reference-Cited by-同舟云学术

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Influence of the GaAs substrate orientation on the composition of GaxIn1−xP (x≈0.5) grown by LPE and MOCVD

Published:2008-09 Issue:22 Volume:516 Page:8092-8095
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mishurnyi V.A.,de Anda F.,Gorbatchev A.Yu.,Kudriavtsev Yu.,Elyukhin V.A.,Prutskij T.,Pelosi C.,Bocchi C.,Ber B.Y.,Vazquez F.E. Ortiz

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase Epitaxy

2. Liquid phase epitaxial growth of GaxIn1−xP

3. Liquid Phase Epitaxial Growth of In1-xGaxP

4. Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP

5. Growth and electrical properties of liquid phase epitaxial layers of GaxIn1-xP lattice-matched to GaAs substrates

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of GaAs/AlxGa1−xAs layers by LPE method and their characterization by SIMS;The European Physical Journal Applied Physics;2011-08-18

2. GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE);Journal of Physics: Conference Series;2009-05-01

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