Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping
2. Spontaneous and stimulated photoluminescence on nitrogen A‐line and NN‐pair line transitions in GaAs1−x Px : N
3. Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps inGaAs1−xPx
4. Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inIn1−xGaxP
5. Behavior of above‐gap NN pair states in radiative recombination in GaAs1−xPx : N+ (x=0.24, 77°K)
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of interference effects on optical transitions with the participation of isoelectronic nitrogen impurities in GaAs1?yPy solid solutions;Journal of Applied Spectroscopy;1988-03
2. Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic study;Physical Review B;1980-04-15
3. Nitrogen states in Ga(As,P) and the intermediate-range model;Physical Review B;1979-03-15
4. Chapter 1 Photopumped III-V Semiconductor Lasers;Semiconductors and Semimetals;1979
5. Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) ‐InP;Applied Physics Letters;1978-09-15
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