Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.21.3478/fulltext
Reference30 articles.
1. Recombination processes associated with “Deep states” in gallium phosphide
2. Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87)
3. Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum
4. Effect of composition and pressure on the nitrogen isoelectronic trap inGaAs1−xPx
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