Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.36.1400/fulltext
Reference17 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Stimulated emission on Nx(’’A‐line’’) recombination transitions in nitrogen‐implanted GaAs1−xPx(x≈0.37)
3. THE NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS‐RICH GALLIUM ARSENIDE PHOSPHIDE
4. Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps inGaAs1−xPx
5. Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPx
Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep Centers in Semiconductors;Materials Science and Technology;2013-02-15
2. Defect States and Band States;Handbook of the Physics of Thin-Film Solar Cells;2013
3. Acceptorlike behavior of nitrogen deep traps inGaAs:N;Physical Review B;2006-02-07
4. Charge-Density Patching Method for Unconventional Semiconductor Binary Systems;Physical Review Letters;2002-06-05
5. Large-scale local-density-approximation band gap-corrected GaAsN calculations;Applied Physics Letters;2001-03-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3