Large-scale local-density-approximation band gap-corrected GaAsN calculations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1354162
Reference17 articles.
1. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
2. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
3. Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum
4. Band Anticrossing in GaInNAs Alloys
5. Localization and anticrossing of electron levels inGaAs1−xNxalloys
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