Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) ‐InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90427
Reference27 articles.
1. Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
2. Liquid phase epitaxial growth of InGaAs on InP
3. Growth and characterization of InGaAsP–InP lattice‐matched heterojunctions
4. A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrate
5. Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x(x=0, 0.2, 0.4) Substrates;Japanese Journal of Applied Physics;1990-11-20
2. Characteristics of tin and cadmium doping in liquid‐phase epitaxial grown InGaAsP;Journal of Applied Physics;1985-01-15
3. Epitaxial ice crystal growth on covellite (CuS) I. Influence of misfit strain on the growth of non-thickening crystals;Journal of Crystal Growth;1984-11
4. Conditions for OMVPE Growth of GaInAsP/InP Crystal;Japanese Journal of Applied Physics;1984-09-20
5. Lattice matched heterolayers;Defect Complexes in Semiconductor Structures;1983
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