Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s003390000457.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The development of room temperature LEDs and lasers for the mid-infrared spectral range;physica status solidi (a);2008-01
2. Liquid Phase Epitaxy of Quantum Wells and Quantum Dots;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
3. Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy;Journal of Physics D: Applied Physics;2002-11-18
4. Liquid phase epitaxial growth and morphology of InSb quantum dots;Journal of Physics D: Applied Physics;2001-03-14
5. Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy;Journal of Physics D: Applied Physics;2000-11-24
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