Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369365
Reference26 articles.
1. Over 30% efficient InGaP/GaAs tandem solar cells
2. Operation and device applications of a valved-phosphorus cracker in solid-source molecular-beam epitaxy
3. Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors
4. Heavy doping of silicon into Ga0.5In0.5P at low temperatures in organometallic vapor phase epitaxy
5. Electronic and optical characterization of InGaP grown by gas-source molecular-beam epitaxy
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