Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862958
Reference28 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Indium nitride (InN): A review on growth, characterization, and properties
3. Electron mobilities in gallium, indium, and aluminum nitrides
4. Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
5. Small band gap bowing in In1−xGaxN alloys
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3. Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers;Semiconductors;2019-10
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