Heavy doping of silicon into Ga0.5In0.5P at low temperatures in organometallic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation
3. Disappearance of long-range ordering in Ga0.5In0.5P with tilting of substrate from (100) towards (511)A
4. Low pressure MOVPE growth of Si-doped Ga0.5In0.5P using Si2H6
5. Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy
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