Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence-Reference-Cited by-同舟云学术

Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence

Published:2013-05 Issue: Volume:370 Page:168-172
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Changjae,Lee Sangsoo,Shin Keun-Wook,Oh Sewoung,Moon Daeyoung,Kim Sung-Dae,Kim Young-Woon,Kim Chang-Zoo,Park Won-kyu,Choi Won Jun,Park Jinsub,Yoon Euijoon

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

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2. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells;Kalyuzhnyy;Semiconductors,2010

3. Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers;Prutskij;Crystal Research and Technology,2010

4. Surfactant effects of dopants on ordering in GaInP

5. Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposition;He;Applied Physics Letters,2010

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1. Metal work function engineering on epitaxial (100)Ge and (110)Ge metal-oxide-semiconductor devices;Microelectronic Engineering;2018-11

2. The Photoluminescence Origin of Self-Activated Tungstates and Molybdates;SCI ADV MATER;2017

3. Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge;Journal of Electronic Materials;2015-11-25

4. Reduction in threading dislocation density in ge epitaxial layers grown on Si(001) substrates by using rapid thermal annealing;Journal of the Korean Physical Society;2015-11

5. Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium;Applied Surface Science;2014-10