Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells-Reference-Cited by-同舟云学术

Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells

Published:2001 Issue:3 Volume:9 Page:179-189
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Friedman D. J.,Olson J. M.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Next-generation, high-efficiency III-V multijunction cells. Proceedings of the 28th IEEE Photovoltaic Specialists Conference 2000; 998.

2. 32·3%-efficient triple-junction solar cells: the promise and challenge of their application in high-concentration-ratio PV systems. Proceedings of the 28th IEEE Photovoltaic Specialists Conference 2000; 955.

3. High-efficiency GaAs/Ge monolithic tandem solar cells

4. GaAs/Ge tandem-cell space concentrator development

5. The development of Ge bottom cell for monolithic and stacked multi-junction applications. Proceedings of the 22nd IEEE Photovoltaic Specialists Conference 1991; 90-92.

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