Temperature dependence of photoluminescence from ordered GaInP2epitaxial layers-Reference-Cited by-同舟云学术

Temperature dependence of photoluminescence from ordered GaInP2epitaxial layers

Published:2010-01 Issue:1 Volume:45 Page:79-84
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Prutskij T.,Pelosi C.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference12 articles.

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2. Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?

3. Temperature dependence of the optical properties ofInAs/AlyGa1−yAsself-organized quantum dots

4. Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells

5. Transport and Optical Phenomena, in Semiconductorsand Semimetals, Vol. 8, edited by R. K. Willardson and A. C. Beer (Academic Press, New York, 1972) p. 344.

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1. Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices;Journal of Luminescence;2016-10

2. Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence;Journal of Crystal Growth;2013-05

3. Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics;Applied Physics Letters;2011-08-29

4. Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities;Crystal Research and Technology;2011-01-24