Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors

Published:1995-05 Issue: Volume:150 Page:585-590
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shirakashi Jun-ichi,Azuma Toshiaki,Fukuchi Fumihiko,Konagai Makoto,Takahashi Kiyoshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure

2. Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

3. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

4. P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy

5. J. Shirakashi, E. Tokumitsu, M. Konagai, A. Miyano, R.T. Yoshioka, S. Nozaki and K. Takahashi, in: Extended Abstracts 1992 Int. Conf. on Solid State Devices and Materials, Yokohama, pp. 705-706.

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