Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes
2. Over 30% efficient InGaP/GaAs tandem solar cells
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4. Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors
5. Long-range atomic order inGaxIn1−xAsyP1−yepitaxial layers [(x,y)=(0.47,1), (0.37,0.82), (0.34,0.71), and (0.27,0.64)]
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1. Quantification of InxGa1−xP composition modulation by nanometric scale HAADF simulations;Applied Surface Science;2013-03
2. Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy;Journal of Crystal Growth;2010-07
3. Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N2;Journal of Crystal Growth;2010-04
4. Temperature-Dependent Electron Transport in In 0.5 Ga 0.5 P/GaAs Grown by MOVPE;Chinese Physics Letters;2007-07-26
5. Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties;Journal of Applied Physics;2007-03-15
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