P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy

Published:1991-09-15 Issue:Part 2, No. 9B Volume:30 Page:L1609-L1611
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shirakashi Jun-ichi,Yamada Takumi,Qi Ming,Nozaki Shinji,Takahashi Kiyoshi,Tokumitsu Eisuke,Konagai Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition;Applied Physics Letters;2000-07-10

2. Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD;Journal of Electronic Materials;2000-01

3. Optical characterization of carbon-doped Ga0.47In0.53As;Journal of Luminescence;1999-12

4. Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition;Applied Physics Letters;1999-05-17

5. Lattice contraction in carbon-doped GaAs epilayers;Physical Review B;1998-06-15

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