III–V Semiconductor Quantum-Well Devices Grown by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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III–V Semiconductor Quantum-Well Devices Grown by Metalorganic Chemical Vapor Deposition

Published:2013-10 Issue:10 Volume:101 Page:2188-2199
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Dupuis Russell D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/5/6600788/06584728.pdf?arnumber=6584728

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Fast XRD Apparatus for the Epitaxial Films with a Focusing X-Ray Beam;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth;Journal of Vacuum Science & Technology B;2023-10-31

3. Three-Level Optical Stark Effect of Excitons in GaAs Cylindrical Quantum Wires;Journal of Nanomaterials;2021-03-17

4. Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE;Crystals;2019-06-14

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