Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90753
Reference12 articles.
1. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
2. Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy
3. Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
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